In-campus accommodation (in newly constructed Himgiri Apartments) has been arranged by INDICON organizing committee for all the participants. Request for accommodation has to be sent to :


Prof. R.P.Jindal

Fellow, IEEE

Vanderziel Institute of Science and Technology, LLC

Princeton, NJ, USA

Mesoscopic Devices: A Bio-Inspired Approach


Since the invention of the bipolar junction transistor in 1947, advances in electronics over the last 70 years has enriched the life of every man, woman and child on this planet earth. The key features enabling this phenomenal progress are miniaturization, integration and repeatability. However, we are now approaching a scenario where devices and circuits, manufactured using identical technology steps and fabricated on the same wafer next to each other, exhibit noticeably different characteristics. One reason for this divergence in performance is the limitations of the conventional top-down manufacturing approach where the miniaturization is achieved by dividing matter into smaller fragments. This results in excessive device structure variations. We will refer to these variations as extrinsic fluctuations. The other reason for enhanced variability in the behavior of otherwise identical devices is the finite number of entities involved in contributing to the device action. These shall be referred to as intrinsic fluctuations. To overcome the extrinsic fluctuations manifested by the top-down device fabrication approach, a bio-inspired bottom-up approach akin to growth in living organisms holds promise. However, the intrinsic fluctuations generated by the finite number of participants contributing to the device action are more fundamental in nature.

The concept of average doping, device length, width, and thickness must be replaced by point doping with spatial, dimensional, and material parameter variability. Conventional device modeling must make a transition from continuous to atomistic simulations. Exception(s) to this general trend do exist where small dimensions result in less variability. Further, due to the failure of the central limit theorem in predicting variability, there is a need to experimentally investigate the incessant fluctuations and develop statistical circuit models coupled with innovative circuit design techniques to develop cost-effective products. In spite of these challenges, system level performance will continue to improve monotonically taking a cue from bio-inspired system architectures by focusing on feedback, redundancy and self-learning.


Renuka P. Jindal received his Ph.D. degree in Electrical Engineering from the University of Minnesota in 1981. Upon graduation, he joined Bell Laboratories in Murray Hill, New Jersey. His experience at Bell Labs for over 22 years bridged both technical and administrative roles. On the technical side, he worked in all three areas of devices, circuits and systems. Highlights include, in the early eighties, fundamental studies of noise behavior of MOS devices with channel lengths in the few hundred nanometers regime. His contributions led to almost an order of magnitude reduction in device noise. Over the years, this has made MOS the technology of choice for broad-band fiber optics, and narrow-band wireless base station and terminal applications including cell phones and pagers. He also designed and demonstrated high performance single-chip gigahertz-band RF integrated circuits for AT&T’s Metrobus lightwave project. He researched the physics of carrier multiplication and invented techniques for ultra-low-noise signal amplification and detection in terms of novel devices and circuits based on a new principle of random multiplication and optoelectronic integration. On the administrative side, Dr. Jindal developed and managed significant extramural funding from federal agencies and independent Lucent Technologies business units. He was solely responsible for developing and deploying a corporate-wide manufacturing-test strategy in relation to contract manufacturing for Lucent Technologies. In addition, he established and taught RFIC design courses at Rutgers University. In Fall of 2002, Dr. Jindal accepted the position of William and Mary Hansen Hall Board of Regents Eminent Scholar Endowed Chair at University of Louisiana, Lafayette, Louisiana. There, he continued to teach and undertake fundamental research in the area of random processes, wireless and lightwave devices, circuits and systems. Among the world’s firsts included the establishment of noise performance of sub-100nm MOS devices. In 2017, Prof. Jindal was named Eminent Scientist and Chief Technology Officer of Vanderziel Institute of Science and Technology, LLC, Princeton, New Jersey, USA. There he continues research in stochastic processes cutting across distinct disciplines of Engineering, Material Science, Physics, Biology and Medicine focused on the creation of new technologies with a broad impact in the service of humanity.

In 1985, Prof. Jindal became a senior member of IEEE. He received the Distinguished Technical Staff Award from Bell Labs in 1989. In 1991, he was elected Fellow of the IEEE for his contributions to the field of solid-state device noise theory and practice. In December 2000, he received the IEEE 3rd Millennium Medal. From 1987 to 1989, he served as editor of the solid-state device phenomena section of IEEE Transactions on Electron Devices. From 1990 to 2000, he was Editor-in-Chief of the IEEE Transactions on Electron Devices. From 2000 to 2008, he served as Vice-President of Publications for the IEEE Electron Devices Society (EDS). In December 2007, he was voted in as President-Elect of EDS. From 2010 to 2011, Prof. Jindal served as the President of IEEE Electron Devices Society and thereafter served as EDS Junior and Senior Past President. In 2013, Prof. Jindal founded the open access IEEE Journal of Electron Devices Society (J-EDS) and served as Editor-in-Chief of the J-EDS until 2016. In October 2016, Prof. Jindal was elected as the IEEE Division I Delegate-Elect / Director Elect 2017. In December 2016, Prof. Jindal received the IEEE Electron Devices Society Distinguished Service Award. He will serve as the IEEE Division I Delegate/Director during 2018 and 2019. As a member of the IEEE Board of Directors and IEEE Assembly, he will represent five IEEE operating units including Circuits and Systems Society, Council for Electronic Design Automation, Electron Devices Society, Nanotechnology Council and Solid-State Circuits Society.

Roger U. Fujii

Fellow, IEEE

2016 IEEE Computer Society President

Developing Safe, Secure and Reliable Software Systems


Today, more than ever we have computing systems that control many life-threatening functions of our lives. These systems need to be developed so that they are safe, secure and reliable. The presentation will describe a time proven methodology and examples of analysis/test techniques to developing complex systems to be safe, secure and reliable. This methodology was developed by the author and is being used to certify critical, large systems such as all manned and unmanned space systems, medical radiation therapy treatment systems, instrumentation and control systems of nuclear power plants, control system of air traffic control centers, and commercial avionics flight control systems.


Roger Fujii is a senior industry executive and a long-term Computer Society volunteer. He was the 2016 IEEE Computer Society President.. He served as conference program chair, VP of Standards Board, 1012 IEEE Standard Working Group Chair, and US Chair of ISO/IEC International Standards.  He served in the IEEE Board of Directors between 2012 2014.

Mr. Fujii is the President of Fujii Systems, which is specializing in executive services. He retired from Northrop Grumman as VP responsible from managing a $1B+ division developing F22/F35 communication systems. He lectured at UCLA and Sacramento State University, and is a guest professor at Xiamen University. He served on the National Academy of Sciences committee for Space Shuttle program.

Mr. Fujii is a nationally recognized expert in systems and software verification and validation. He is considered as one of the originators of the verification and validation (V&V) methodology. He has applied V&V to certify critical nuclear weapon systems, NASA deep space probes, radiation therapy devices, avionic systems, and large scale government programs

Fujii has a BS/MS in Electrical Engineering from the University of California, Berkeley, and studied business management at Harvard, UCLA, and Darden. He is a contributing author for two books and has presented numerous papers.

Prof. Sudip K. Mazumder

Fellow, IEEE

University of Illinois, Chicago, IL, USA

Wide-Bandgap Power-Electronics Technology and Controls


Over the last decade or so, there has been a surge in the R&D level application of SiC and GaN based FETs for power-electronic converters encompassing dc/dc, ac/dc, dc/ac, as well as ac/ac energy-conversion systems. There are plurality of reasons for this slow but somewhat steady transition away from silicon at least in several niche applications. With regard to SiC based FETs, the material properties of SiC yield low on-state resistance (that yield low conduction loss), high thermal conductivity and high-temperature sustenace (leading to reduced heat sink and higher power density), and high breakdown voltage (leading to high-voltage power electronics and operation at high frequency). Existing GaN-bsaed power semiconductor devices have the potential to make transformative changes in lower voltage power electronics market. GaN-on-Si FETs are expected to yield lower device cost in near term, have low on-state resistance due to ballistic transport, and yield very low device capacitance (which reduces switching losses). 

Clearly, such wide-bandgap power semiconductor devices have the potential to make significant impact in multiple areas of emerging and existing applications including but not limited to renewable and alternative energy, energy storage, smart/micro grid, electric vehicles, telecommunication, internet of things, motor drives, power quality, space, aerospace, defense systems to name a few. This presentation will provide an overview of how wide-bandagap power semcionductor devices, package, and application technologies are making and beginning to make tangible impact in power electronics and energy conversion systems. Subsequently, the presentation will delve into new controls that are needed to take advantage of such rapid transition devices. The latter need has emerged because of very fast slew rate of these next generation devices that yield high dv/dt and high di/dt.   


Sudip K. Mazumder is an IEEE Fellow and an IEEE Power Electronics Society (PELS) Distinguished Lecturer. He is a PELS AdCoM Member and the Chair of PELS TC on Sustainable Energy Systems. He served as the Guest Editor-in-Chief/Editor for IEEE PELS and IES Transactions (2014-2017) and as the First Editor-in-Chief for Advances in Power Electronics journal (2006-2009). He serves as an Associate Editor for IEEE (TPEL, TII, TAES, JESTPE) Transactions and as a Guest Editor for IEEE JESTPE and TIE. Currently, he serves 2 major PELS initiatives: International Technology Roadmap for Wide-bandgap technologies and Billion Smiles (with past-PELS Presidents). He served as TPC Chair for 2016 WiPDA and is a Steering Committee Member for PEDG. He served as a TPC Plenary, Tutorial, and Industry/Student Chairs for ECCE in 2015, 2016, and 2010. He also served as a Working Group Member for IEEE P1676 standard.

He received his Ph.D. from Virginia Tech (2001). He is a Professor at the University of Illinois, Chicago and the President of NextWatt LLC. He has over 25 years of professional experience and has held R&D and design positions in and served as a Technical Consultant for leading industries. He has published over 200 refereed papers, holds 10 patents, and delivered over 86 keynote/plenary/invited presentations. His research has been supported by multi-million dollar grants encompassing about 50 sponsored-research projects from leading federal and industrial organizations. He is the recipient of University of Illinois Chicago’s Inventor of the Year Award (2014), University of Illinois’ highest award (University Scholar Award) (2013), Office of Naval Research Young Investigator Award (2005), IEEE International Future Energy Challenge Award (2005), National Science Foundation CAREER Award (2003), and IEEE PELS Transaction Paper Award (2002).